Ceramic multi-layered capacitor

ABSTRACT

A ceramic multi-layer capacitor includes a main body, which has ceramic layers arranged along a layer stacking direction to form a stack, and first and second electrode layers arranged between the ceramic layers. The multi-layer capacitor also includes a first external contact-connection arranged on a first side surface of the main body and electrically conductively connected to the first electrode layers, and a second external contact-connection arranged on a second side surface of the main body. The second side surface is situated opposite the first side surface and is electrically conductively connected to the second electrode layers.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application is a continuation of U.S. application Ser. No.14/399,860, filed on Nov. 7, 2014 which is a national phase filing undersection 371 of PCT/EP2013/057614, filed Apr. 11, 2013, which claims thepriority of German patent application 10 2012 104 033.8, filed May 8,2012, each of which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

A ceramic multi-layer capacitor which is preferably suitable forhigh-power applications is specified. The multi-layer capacitor can beused, for example, as a filter element in an AC/DC or DC/DC converter.

BACKGROUND

The International Publication WO 2011/085932 A1, U.S. counterpart2012/0281335 A1, describes a capacitor comprising a heating element andalso a capacitor region with dielectric layers and internal electrodesarranged between the layers, wherein the heating element and thecapacitor region are thermally conductively connected to one another.

SUMMARY

At least some embodiments specify a ceramic multi-layer capacitor whichhas improved properties, such as, for example, a particularly low ESRvalue (equivalent series resistance), in comparison with knownmulti-layer capacitors.

A ceramic multi-layer capacitor in accordance with at least oneembodiment comprises a main body. The main body preferably has acuboidal shape. The main body comprises dielectric layers arranged alonga layer stacking direction to form a stack. The dielectric layers arepreferably embodied as ceramic layers. Furthermore, the main bodycomprises first and second electrode layers arranged between the ceramiclayers. By way of example, in each case one first and one secondelectrode layer can be arranged at a distance from one another in anidentical layer plane. Furthermore, the first and second electrodelayers can be arranged in each case in different layer planes of thestack.

In accordance with a further embodiment, the main body comprises a firstexternal contact-connection. Preferably, the external contact-connectionis arranged on a first side surface of the main body and is electricallyconductively connected to the first electrode layers. Preferably, thefirst electrode layers are directly electrically conductively connectedto the first external contact-connection, that is to say that the firstelectrode layers directly adjoin the first external contact-connectionand are directly connected to the first external contact-connection. Thefirst electrode layers preferably extend as far as the first sidesurface.

Furthermore, the main body has a second external contact-connection,which is arranged on a second side surface of the main body, said secondside surface being situated opposite the first side surface, and iselectrically conductively connected to the second electrode layers.Preferably, the second electrode layers are directly electricallyconductively connected to the second external contact-connection, thatis to say that the second electrode layers directly adjoin the secondexternal contact-connection and are directly connected to the secondexternal contact-connection. The second electrode layers preferablyextend as far as the second side surface.

In accordance with a further embodiment, the main body has a width Balong the layer stacking direction. In this case, B designates thespatial extent of the main body of the multi-layer capacitor along thelayer stacking direction. Furthermore, the main body has a height Hperpendicular to the first side surface. The height H can thus beunderstood as the spatial extent of the main body perpendicular to thefirst side surface of the main body. Preferably, the height H also runsperpendicular to the second side surface of the main body. Furthermore,the main body has a length L perpendicular to the height H andperpendicular to the layer stacking direction. Consequently, the lengthL designates the spatial extent of the main body in a directionperpendicular to the width B and to the height H.

In accordance with a further embodiment, the relationship B/H≧0.2 holdstrue for the ratio of the width B to the height H. In accordance withone preferred embodiment, B/H≧0.3 holds true. In accordance with afurther preferred embodiment, B/H≧1.0 holds true. In accordance with oneparticularly preferred embodiment, B/H≈0.35 holds true.

In accordance with a further embodiment, L/B≧1 holds true for the ratioof the length L to the width B. Furthermore, L/B≧5 preferably holdstrue, and L/B≦3.5 particularly preferably holds true.

In accordance with a further embodiment, L/H≧0.8 holds true for theratio of the length L to the height H. In accordance with one preferredembodiment, L/H≧1 holds true. In accordance with a further preferredembodiment, L/H≧1.2 holds true.

As a result of the ratios between the width B and the height H of themain body as specified here, in the case of a ceramic multi-layercapacitor described here, the ratio of the feed cross section of theelectrode layers to the useful cross section, that is to say to thecapacitance-determining area, can be significantly increased. What canbe achieved as a result is that the ceramic multi-layer capacitordescribed here has a particularly low ESR value (equivalent seriesresistance). By way of example, a ceramic multi-layer capacitordescribed here, e.g. having a capacitance of between 4 μF and 10 μF, canhave an ESR of between 3 mΩ and 5 mΩ during operation at a frequency ofbetween 100 kHz and 1 MHz.

In accordance with a further embodiment, the main body has thirdelectrode layers, which are electrically conductively connected neitherto the first nor to the second external contact-connection. Preferably,the third electrode layers are not electrically conductively connectedto any external contact-connection. Here and hereinafter, the thirdelectrode layers can also be designated as floating electrodes.

In accordance with a further embodiment, the third electrode layersoverlap the first electrode layers. In other words, the third electrodelayers each have at least one partial region which, in an imaginaryprojection in the layer stacking direction of the stack, could bebrought to congruence with at least one partial region of the firstelectrode layers. Furthermore, the third electrode layers can overlapthe second overlap layers. By way of example, in each case one first andone second electrode layer can be arranged at a distance from oneanother in an identical layer plane of the main body and in each caseoverlap at least one third electrode arranged in a further layer plane.

The use of first, second and floating third electrode layers, that is tosay the use of serial internal electrodes, advantageously brings aboutan increase in the breakdown field strength, which has a beneficialeffect for the robustness and the reliability of the multi-layercapacitor. Furthermore, this makes it possible to reduce the dielectriclayer thickness, that is to say the layer thickness of the ceramiclayers, which as a consequence results in an increase in the crosssection of an electrode layer per volume of ceramic and thus animprovement of the ESR value (equivalent series resistance) and animprovement of the current-carrying capacity of the component forapplication currents.

In accordance with a further embodiment, the ceramic layers have a layerthickness of between 3 μm and 200 μm. In accordance with a furtherpreferred embodiment, the ceramic layers have a layer thickness ofbetween 10 μm and 100 μm. Particularly preferably, the ceramic layershave a layer thickness of approximately 25 μm.

In accordance with a further embodiment, the electrode layers have alayer thickness of between 0.1 μm and 10 μm. In accordance with onepreferred embodiment, the electrode layers have a layer thickness ofbetween 1 μm and 4 μm. Particularly preferably, the electrode layershave a layer thickness of approximately 3.5 μm.

In accordance with a further embodiment, the main body has at least tenceramic layers. In accordance with a further embodiment, the main bodyhas at least ten first electrode layers. In accordance with a furtherembodiment, the main body has at least ten second electrode layers.

In accordance with a further embodiment, the following relationshipholds true for the number of first electrode layers provided in the mainbody and the width B of the main body: ratio of the number of firstelectrode layers to the width B≧10/mm. In other words, the main body hasat least ten first electrode layers per mm width. Furthermore, the mainbody preferably has at least ten second electrode layers per mm width.

In accordance with a further embodiment, the electrode layers comprise abase metal. The electrode layers preferably comprise copper. Inaccordance with one preferred embodiment, the electrode layers consistof copper. In particular after the sintering of the multi-layercapacitor, the electrode layers can consist of pure copper. On accountof the high thermal and electrical conductivity of copper, aparticularly small ESR value (equivalent series resistance) can beobtained in the case of the multi-layer capacitor described here.Furthermore, the process for producing the multi-layer capacitor canadvantageously be made less expensive by virtue of the use of basemetals.

In accordance with a further embodiment, the first and second sidesurfaces are surface-treated. By way of example, the first and secondside surfaces can be lapped. Furthermore, it is possible for the firstand second side surfaces to be ground, scoured or plasma-etched.Advantageously, a particularly good contact between the externalcontact-connections and the first and respectively second electrodelayers can be achieved by means of the surface-treated side surfaces. Inparticular, by means of the surface treatment of the first and secondside surfaces, ceramic material present between individual firstelectrode layers and respectively between individual second electrodelayers can be drawn back, such that the first and second electrodelayers can be brought to the surface of the main body reliably in termsof process engineering. By way of example, the externalcontact-connections can then be applied without firing a gas flow, forexample by a standard sputtering process.

In accordance with a further embodiment, the first and second externalcontact-connections each have at least one first sputtering layer,wherein the first sputtering layers are in direct contact with the firstor second electrode layers. Preferably, a first sputtering layer isapplied on the first side surface of the main body, and is in directcontact with exit surfaces of the first electrode layers from the mainbody. Likewise, a first sputtering layer can be applied on the secondside surface of the main body, and is in direct contact with exitsurfaces of the second electrode layers from the main body. Thesputtering layers can have a layer thickness of between 0.1 μm and 1.5μm, for example. Preferably, the first sputtering layers comprisechromium or consist of chromium.

In accordance with a further embodiment, the first and second externalcontact-connections each have a second sputtering layer, wherein thesecond sputtering layers are preferably applied directly on the firstsputtering layers. The second sputtering layers preferably comprisecopper or consist of copper.

In accordance with a further embodiment, the first and second externalcontact-connections each have a third sputtering layer, wherein thethird sputtering layers are preferably applied directly on the secondsputtering layers. The third sputtering layers preferably comprise goldor consist of gold. Alternatively, the third sputtering layers can alsocomprise silver or consist of silver.

In accordance with a further embodiment, the ceramic layers comprise aceramic material for which the following formula holds true:Pb_((1−1.5a−0.5b+1.5d+e+0.5f))A_(a)B_(b)(Zr_(1−X)Ti_(X))_(1−c−d−e−f)Li_(d)C_(e)Fe_(f)Si_(c)O₃+y·PbO(I) wherein A is selected from the group consisting of La, Nd, Y, Eu,Gd, Tb, Dy, Ho, Er and Yb; B is selected from the group consisting ofNa, K and Ag; and wherein C is selected from the group consisting of Ni,Cu, Co and Mn; where 0<a<0.12; 0.05≦x≦0.3; 0≦b<0.12; 0≦c<0.12; 0≦d<0.12;0≦e<0.12; 0≦f<0.12; 0≦y−1, wherein b+d+e+f>0.

Preferably, a particularly Zr-rich PZT solid-solution phase is selectedfrom the phase diagram. Moreover, the condition b+d+e+f>0 stipulatesthat the ceramic material must contain at least one element from thegroup consisting of Li, Na, K, Ag, Fe, Ni, Cu, Co and Mn (lithium, ironand groups B and C) besides a dopant from the defined group A (rareearth element). As a result, a ceramic material which is sinterable attemperatures of 1000° C. to 1120° C. can be provided, which enables acombination with other substances/materials, not stable at relativelyhigh temperatures, as early as during the method for producing theceramic material. By way of example, it becomes possible to sinter theceramic material (“co-firing” method) with electrode layers composed ofbase metals, such as silver or copper, for instance. Moreover, theceramic material has a higher switching field strength and/or higherrelative permittivity (dielectric constant) compared with the PZTmaterial doped only by group A.

Moreover, low sintering temperatures promote the formation of smallgrain sizes of the ceramic material, which has a favorable influence onthe dielectric properties. More precisely, the dielectric properties ofPZT ceramics are generally also determined by the domain size. Domainsare understood to mean regions in the ceramic with the samepolarization. The domain size is dependent on the grain size. The numberof domains per grain increases as the grain size increases. The changeddomain size has consequences for the material properties of the ceramic.It is thus desirable to be able to control the grain size or graingrowth.

Preferably, the doped lead zirconate titanate ceramic has a perovskitelattice, which can be described by the general formula ABO₃, wherein Adenotes the A-sites and B denotes the B-sites of the perovskite lattice.

The perovskite lattice is distinguished by a high tolerance towarddopings and vacancies.

The perovskite structure of lead zirconate titanate (PZT) can bedescribed by the general formula ABO₃. A unit cell of the PZT crystallattice can be described by a cube. The A-sites are occupied by Pb²⁺ions situated on the corners of the cube. An O²⁻ ion is in each casesituated in the center of each cube face. A Ti⁴⁺ ion and a Zr⁴⁺ ion(B-sites) are situated in the center of the cube. This structure has ahigh tolerance toward substitution of the metal ions by other metal ionsand defects, for which reason it can be doped well.

Distortion of the highly symmetrical coordination polyhedron can occurdepending on the difference in size between the ion introduced by dopingand the substituted ion. This distortion can change the center ofsymmetry of the crystal and thus influence the polarizability.

The different doping possibilities can be classified on the basis of thevalency of the doping ion. Isovalent doping, that is to say thesubstitution of one ion by another ion having the same valency, does notaffect possible vacancies in the ceramic material. If cations of lowvalency (acceptors) replace cations having a higher valency, thenvacancies are generated in the anion lattice. Cations of higher valency(donors), if they replace cations of lower valency, cause vacancies inthe cation lattice. Doping with acceptors and donors leads in each caseto characteristic changes in the material properties. Acceptor-dopedceramics are also designated as “hard” ceramics, and donor-dopedceramics as “soft” ceramics.

A doping, for example, with Nd³⁺ (or some other rare earth element fromgroup A), on the A-sites constitutes a donor doping. On account of theionic radius of neodymium, the latter is incorporated on the Pb²⁺ sites.Charge equalization takes place as a result of the correspondingformation of Pb vacancies. The doping brings about metric changes in thelattice and the influencing of longer-acting interactions between theunit cells.

A doping, for example, with K⁺ or Fe³⁺, on the A- or B-sites,constitutes an acceptor doping. On account of the ionic radius ofpotassium, the latter is incorporated on the Pb²⁺ sites, while Fe³⁺ isincorporated on the Zr⁴⁺ or Ti⁴⁺ sites. The charge equalization takesplace as a result of the reduction of Pb²⁺ vacancies (A-vacancies)and/or the corresponding formation of oxygen vacancies. The dopingbrings about grain growth and oxygen vacancy formation which providessintering densification and which is induced by K acceptors at thesintering temperature. In the cooling process, recombination with the Nddonors with the formation of quasi-neutral {Nd/K} defect pairs can takeplace, such that no or only a very low lead or oxygen vacancyconcentration is present in the finished ceramic.

This doping affects the grain growth of the material, which is dependenton the concentration of the introduced doping. In this case, smallamounts of doping contribute to the grain growth, whereas excessivelylarge amounts of doping ions can inhibit the grain growth.

The properties of donor-doped PZT materials, such as are present in thecase where Nd occupies Pb sites, are substantially based on an increaseddomain mobility caused by the Pb vacancies. The vacancies have theeffect that the domains can already be influenced by small electricfields. This leads to an easier displaceability of the domain boundariesand thus to higher dielectric constants in comparison with undoped PZTceramics.

Acceptor and donor dopings are present simultaneously in the ceramicmaterial. This has the effect that the negative properties which occurwhen the ceramic was doped with only one of the two types of doping arecompensated for. By way of example, if only an acceptor doping werepresent, then this often leads to decreasing dielectric constants, thatis to say that the constants are less than those of the undoped ceramic.If only a donor doping is present, then the grain growth is inhibitedand the grains of the ceramic do not attain the desired size. Thepresent combination of the dopings contrasts positively with the undopedceramic in these points, however. It has higher dielectric constants,which is the case even at lower sintering temperatures.

In accordance with one preferred embodiment, 0.1≦x≦0.2 holds true, sincethe polarization curves can be set better in this range.

In accordance with a further embodiment, it holds true that 0≦y<0.05.

In accordance with a further embodiment, it holds true that0.001<b<0.12, wherein with further preference d=e=f=0 holds true.

In accordance with a further embodiment, it holds true that0.001<e<0.12, wherein with further preference b=d=f=0 holds true.

In accordance with a further embodiment, B is sodium (Na). The materialproperties are influenced particularly advantageously as a result ofthis; in particular, the sintering temperature is reduced in comparisonwith PZT material containing only a rare earth element, and theswitching field strength is increased at the same time.

In accordance with a further preferred embodiment, the relativepermittivity at an electric field strength of 1 kV/mm, preferably 2kV/mm, is at least 60% of the relative permittivity at an electric fieldstrength of 0 kV/mm. With further preference, the relative permittivity(dielectric constant) of the ceramic material at a field strength of 2to 5 kV/mm, preferably 1 kV/mm to 10 kV/mm, is at least 60% of therelative permittivity at an electric field strength of 0 kV/mm. Themeasurements are preferably carried out at a temperature of the ceramicmaterial of 125° C.

In accordance with a further preferred embodiment, the ceramic materialhas a relative permittivity of at least 500, preferably at least 1500,at an electric field strength of 1 kV/mm, preferably 2 kV/mm. Withfurther preference, the ceramic material has a relative permittivity ofat least 500, preferably at least 1500, at an electric field strength of2 to 5 kV/mm, preferably 1 kV/mm to 10 kV/mm. The measurements arepreferably carried out at a temperature of the ceramic material of 125°C.

The measurement of polarization hysteresis is a standard method fordetermining the relative permittivity (dielectric constant). Forfrequency-independent measurement, quasi-static methods are knownwherein the hysteresis loop is measured point by point. By way ofexample, polarization measurements can be carried out with the aid ofthe TF Analyser 2000 from aixACCT Systems GmbH.

In accordance with a further preferred embodiment, the ceramic materialis an antiferroelectric dielectric. For this purpose, the basic materialPZT is preferably used from the antiferroelectric-orthorhombic phaseregion (O-phase). The antiferroelectric order is characterized by asuperimposition of a plurality of polar sublattices, the electric dipolemoments of which cancel one another out. An antiferroelectric crystalthus has no spontaneous polarization, but does have special dielectricproperties. If an electric field is applied to the antiferroelectric, itbehaves firstly like a linear dielectric. Starting from a specificcritical field strength, an abrupt transition to the ferroelectric phaseis induced and the formerly antiparallel dipoles flip over to the thenenergetically more expedient, parallel, orientation. By contrast, theopposite transition takes place at a lower field strength. This resultsin a so-called double hysteresis loop.

Antiferroelectric ceramic materials have a less highly pronouncedpolarization-field strength hysteresis compared with ferroelectricceramic materials. This results in lower energetic losses in the case ofuse in capacitors. For this reason, the use of antiferroelectric ceramicmaterials is preferred.

In order to produce pure and differently doped lead zirconate titanate(PZT) powders, it is possible to use the traditional mixed oxide methodor else solvent-based methods, also called “sol-gel” methods. Thestarting point is e.g. solutions of the acetates or alkoxides of theconstituent metals, which are converted into granulated xerogels, theceramic precursor substances, by various drying methods. By way ofexample, spray drying and spray freeze granulation with subsequentfreeze drying are available for the drying. The precursors aresubsequently pyrolyzed to form the oxides. Powders produced in this waycan be deagglomerated with little outlay and be conditioned for furtherprocessing.

A ceramic multi-layer capacitor described here is distinguished, inparticular, by a particularly low ESR value (equivalent seriesresistance) and a particularly low ESL value (equivalent seriesinductance).

At the same time, the herein described arrangement of the electrodelayers is expedient for process implementation during the production ofa multi-layer capacitor described herein. Both binder removal andsintering necessitate a gas exchange/equilibrium of binder removalproducts and process gases, which is fostered in the case of themulti-layer capacitor described herein. By the electrode layers that arerelatively short in the lateral direction, the construction promotes animproved possibility for process implementation, whereby as aconsequence ceramic parts are possible which are relatively, measuredagainst conventional multi-layer capacitors, large even in terms of thevolume. Furthermore, in the case of a multi-layer capacitor describedherein, synergistic effects result from the described arrangement of theelectrode layers and the chosen ceramic material of the ceramic layers,which have a positive effect on the ESR value, the ESL value and themechanical and thermal robustness. In particular, the combination of theceramic together with the above-indicated aspect ratios between B, H andL and with the geometry of the electrode layers can improve theelectrical and thermal properties of the component. In this regard, byway of example, the short paths that can be taken by the current throughthe electrodes (geometry effect) together with the thermal stability ofthe insulation resistance (ceramic property) have an extremely positiveeffect on the current-carrying capacity behavior of the component.

BRIEF DESCRIPTION OF THE DRAWINGS

Further advantages and advantageous embodiments of the ceramicmulti-layer capacitor will become apparent from the embodimentsdescribed below in association with FIGS. 1 and 2.

In the figures:

FIG. 1 shows a perspective schematic view of a ceramic multi-layercapacitor in accordance with one embodiment; and

FIG. 2 shows a cross section of the ceramic multi-layer capacitor fromFIG. 1.

In the exemplary embodiments and figures, identical or identicallyacting constituent parts may be provided in each case with the samereference signs. The illustrated elements and their size relationshipsamong one another should not be regarded as true to scale, in principle.Rather, individual elements, such as, for example, layers, componentsand regions, may be illustrated with exaggerated thickness or sizedimensions in order to enable better illustration and/or in order toafford a better understanding.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

FIGS. 1 and 2 show different schematic views of a ceramic multi-layercapacitor 1 in accordance with one exemplary embodiment. The multi-layercapacitor 1 comprises a main body 2 having a cuboidal shape having sixside surfaces. The main body 2 has ceramic layers 3 and first and secondelectrode layers 41, 42 arranged between the ceramic layers 3, whereinthe ceramic layers 3 and the electrode layers 41, 42 are arranged alonga layer stacking direction S to form a stack. In particular, the mainbody 2 has at least 10 first and at least 10 second electrode layers 41,42. In the exemplary embodiment shown, the ceramic layers 3 have a layerthickness of approximately 25 μm. The electrode layers 41, 42 have alayer thickness of approximately 3.5 μm. Alternatively, the ceramiclayers 3 and the electrode layers 41, 42 can also have other layerthicknesses.

The electrode layers comprise copper in the exemplary embodiment shown.What can be achieved as a result is that, firstly, the multi-layercapacitor 1 has the lowest possible ESR value and, secondly, the processfor producing the multi-layer capacitor 1 can be made less expensive.

The multi-layer capacitor 1 furthermore comprises a first externalcontact-connection 51, which is arranged on a first side surface 61 ofthe main body 2, and a second external contact-connection 52, which isarranged on a second side surface 62 of the main body 2. In this case,the first electrode layers 41 are electrically conductively connected tothe first external contact-connection 51 and the second electrode layers42 are electrically conductively connected to the second externalcontact-connection 52. The first and second side surfaces 61, 62 aresurface-treated, wherein the surface treatment is preferably carried outbefore the external contact-connections 51, 52 are applied. Inparticular, the first and second side surfaces 61, 62 can be lapped,scoured, ground or plasma-etched. By the surface-treated side surfaces61, 62, it is advantageously possible to achieve a particularly goodcontact between the external contact-connections 51, 52 and the firstand respectively second electrode layers 41, 42.

In the exemplary embodiment shown, in each case one first and one secondelectrode layer 41, 42 are arranged at a distance from one another in anidentical plane. Said plane is formed by a layer plane formedperpendicularly to the layer stacking direction S of the stack. In thiscase, there is a so-called gap between the first electrode layers 41 andthe second electrode layers 42. Said gap constitutes a region between afirst electrode layer 41 and a second electrode layer 42 in the layerplane in which no electrode layers are arranged. In accordance with analternative exemplary embodiment, it is also possible for the first andsecond electrode layers 41, 42 to be arranged in each case in differentlayer planes.

The main body 2 furthermore has third electrode layers 43, which areelectrically conductively connected neither to the first nor to thesecond external contact-connection 51, 52. The third electrode layers 43overlap both the first and the second electrode layers 41, 42, that isto say that the third electrode layers 43 each have at least one partialregion which, in an imaginary projection in the layer stacking directionS of the stack, could be brought to congruence with at least one partialregion both of the first and of the second electrode layers 41, 42. Inaccordance with the alternative exemplary embodiment in which the firstand second electrode layers 41, 42 are arranged in each case indifferent layer planes, it is possible for the first and secondelectrode layers 41, 42 to overlap one another.

The first and second external contact-connections 51, 52 each have afirst sputtering layer, wherein the first sputtering layers are in eachcase applied directly on the main body 2. In this case, the firstsputtering layers are in direct contact with the first and respectivelysecond electrode layers 41, 42. The first sputtering layers preferablycomprise chromium. Second sputtering layers are in each case applied onthe first sputtering layers, wherein the second sputtering layerspreferably comprise copper. Furthermore, third sputtering layers, whichpreferably comprise gold, are in each case applied on the secondsputtering layers. Alternatively, the third sputtering layers can alsocomprise silver.

The main body 2 has a width B along the layer stacking direction S. Inother words, B denotes the extent of the main body 2 in a directionparallel to the layer stacking direction S. Preferably, at least 10first electrode layers and at least 10 second electrode layers areprovided in the main body 2 per mm width B of the main body.Furthermore, the main body 2 has a height H perpendicular to the firstside surface 51. That is to say that, perpendicular to the first sidesurface 51, the main body 2 has an extent corresponding to the height H.Furthermore, the main body 2 has a length L perpendicular to the heightH and perpendicular to the layer stacking direction S, said lengthcorresponding to the extent of the main body 2 perpendicular to thelayer stacking direction and perpendicular to the height H. B/H≧0.2holds true for the ratio of the width B to the height H of the main body2. Furthermore, L/B≧1 holds true for the ratio of the length L to thewidth B of the main body, and L/H≧1 holds true for the ratio of thelength L to the height H of the main body.

In the exemplary embodiment shown, the main body 2 has a width B ofapproximately 2.5 mm, a height H of approximately 7.0 mm and a length Lof approximately 7.0 mm. Consequently, in the exemplary embodimentshown, the ratio B/H is approximately equal to 0.36. The ratio L/B isapproximately 2.8 and the ratio L/H is approximately 1.0.

The multi-layer capacitor 1 in accordance with the exemplary embodimentshown is distinguished, in particular, by a low ESR value, a low ESLvalue and a high mechanical and thermal robustness. By way of example,the ceramic multi-layer capacitor (380V/10 μF) shown in the exemplaryembodiment in accordance with FIGS. 1 and 2 has the followingfrequency-dependent values: ESR(min)=3 mΩ, ESR(100 kHz)=5 mΩ and ESL<4nH. Furthermore, the multi-layer capacitor 1 can be producedcost-effectively.

The invention is not restricted to the exemplary embodiments by thedescription on the basis of said exemplary embodiments, but ratherencompasses any novel feature and also any combination of features. Thisincludes, in particular, any combination of features in the patentclaims, even if this feature or this combination itself is notexplicitly specified in the patent claims or exemplary embodiments.

What is claimed is:
 1. A ceramic multi-layer capacitor comprising: amain body including ceramic layers arranged along a layer stackingdirection to form a stack, the main body further including first andsecond electrode layers arranged between the ceramic layers, whereineach of the ceramic layers comprise a ceramic material which is anantiferroelectric dielectric; a first external contact-connectionarranged on a first side surface of the main body and electricallyconductively connected to the first electrode layers; and a secondexternal contact-connection arranged on a second side surface of themain body, the second side surface located opposite the first sidesurface and being electrically conductively connected to the secondelectrode layers, wherein the main body has a width B along the layerstacking direction, wherein the main body has a height H perpendicularto the first side surface, wherein the main body has a length Lperpendicular to the height H and perpendicular to the layer stackingdirection, wherein B/H≧0.2 holds true, and wherein a ratio between thewidth B, the height H and the length L is such that a ratio of a feedcross section of the electrode layers to a useful cross section of theelectrode layers results in an ESR value of the multi-layer capacitorbetween 3 mΩ and 5 mΩ during operation with a frequency between too kHzand 1 MHz.
 2. The multi-layer capacitor according to claim 1, whereinL/B≧1 holds true.
 3. The multi-layer capacitor according to claim 1,wherein L/H≧1 holds true.
 4. The multi-layer capacitor according toclaim 1, wherein the main body has third electrode layers that are eachfloating electrodes and that are each electrically conductively isolatedfrom external contact connections.
 5. The multi-layer capacitoraccording to claim 4, wherein the third electrode layers overlap thefirst and second electrode layers.
 6. The multi-layer capacitoraccording to claim 1, wherein each ceramic layer has a layer thicknessof between 3 μm and 200 μm.
 7. The multi-layer capacitor according toclaim 1, wherein each first electrode layer has a layer thickness ofbetween 0.1 μm and 10 μm and wherein each second electrode layer has alayer thickness of between 0.1 μm and 10 μm.
 8. The multi-layercapacitor according to claim 1, wherein the main body has at least 10first electrode layers and at least 10 second electrode layers.
 9. Themulti-layer capacitor according to claim 1, wherein the followingrelationship holds true: number of first electrode layers/width B≧10/mm.10. The multi-layer capacitor according to claim 1, wherein the firstand second electrode layers comprise copper.
 11. The multi-layercapacitor according to claim 1, wherein the first and second sidesurfaces are surface-treated.
 12. The multi-layer capacitor according toclaim 11, wherein the first and second side surfaces are lapped, groundor plasma-etched.
 13. The multi-layer capacitor according to claim 1,wherein the first and second external contact-connections each have atleast one sputtering layer in direct contact with the first or secondelectrode layers.
 14. The multi-layer capacitor according to claim 1,wherein the ceramic layers comprise a ceramic material for which thefollowing formula holds true:Pb_((1−1.5a−0.5b+1.5d+e+0.5f))A_(a)B_(b)(Zr_(1−X)Ti_(X))_(1−c−d−e−f)Li_(d)C_(e)Fe_(f)Si_(c)O₃+y·PbO  (I)wherein A is selected from the group consisting of La, Nd, Y, Eu, Gd,Tb, Dy, Ho, Er and Yb; B is selected from the group consisting of Na, Kand Ag; C is selected from the group consisting of Ni, Cu, Co and Mn;and 0<a<0.12 0.05≦x≦0.3 0≦b≦0.12 0≦c≦0.12 0≦d≦0.12 0≦e≦0.12 0≦f≦0.120≦y≦1, and b+d+e+f>0.
 15. A ceramic multi-layer capacitor comprising: amain body including ceramic layers arranged along a layer stackingdirection to form a stack, the main body further including first andsecond electrode layers arranged between the ceramic layers; a firstexternal contact-connection arranged on a first side surface of the mainbody and electrically conductively connected to the first electrodelayers; and a second external contact-connection arranged on a secondside surface of the main body, the second side surface located oppositethe first side surface and being electrically conductively connected tothe second electrode layers, wherein the main body has a width B alongthe layer stacking direction, wherein the main body has a height Hperpendicular to the first side surface, wherein the main body has alength L perpendicular to the height H and perpendicular to the layerstacking direction, wherein B/H≧0.2 holds true, wherein the main bodyhas third electrode layers that are each floating electrodes and thatare each electrically conductively isolated from external contactconnections, and wherein a layer thickness of the ceramic layers is sosmall that the multi-layer capacitor has an ESR value between 3 mΩ and 5mΩ during operation with a frequency between 100 kHz and 1 MHz.